• 文献标题:   Electronic transport in graphene nanostructures on SiO2
  • 文献类型:   Article
  • 作  者:   IHN T, DROSCHER S, SCHNEZ S, KNOWLES H, GUTTINGER J, HUEFNER M, STAMPFER C, MEIR Y, ENSSLIN K
  • 作者关键词:   graphene, nanoribbon, quantum dot, scanning gate technique
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   ETH
  • 被引频次:   2
  • DOI:   10.1016/j.ssc.2012.04.043
  • 出版年:   2012

▎ 摘  要

We report two experiments on graphene nanostructures. The first was performed on a :graphene nanoribbon, where the nature of electronic transport was investigated in detail. Electrons or holes are found to localize in pockets of the potential along the ribbon. Transport is governed by the joint action of localization and Coulomb interaction. The temperature-dependence of the conductance shows activated behavior at temperatures above a few Kelvin. The activation energy retraces the edges of Coulomb blockade diamonds found in nonlinear transport. In the second experiment the metallic tip of a low-temperature scanning force microscope was scanned above a graphene quantum dot. In addition to the familiar Coulomb blockade fringes, localized states are detected forming in the constrictions connecting the dot to source and drain. (C) 2012 Elsevier Ltd. All rights reserved.