• 文献标题:   Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates
  • 文献类型:   Article
  • 作  者:   SUK JW, KITT A, MAGNUSON CW, HAO YF, AHMED S, AN JH, SWAN AK, GOLDBERG BB, RUOFF RS
  • 作者关键词:   graphene, transfer, membrane, transparent conductive film, raman spectroscopy
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Univ Texas Austin
  • 被引频次:   780
  • DOI:   10.1021/nn201207c
  • 出版年:   2011

▎ 摘  要

Reproducible dry and wet transfer techniques were developed to improve the transfer of large-area monolayer graphene grown on copper foils by chemical vapor deposition (CVD). The techniques reported here allow transfer onto three different classes of substrates: substrates covered with shallow depressions, perforated substrates, and flat substrates. A novel dry, transfer technique was used to make graphene-sealed microchambers without trapping-liquid inside. The dry transfer technique utilizes a polydimethylsiloxane frame that attaches to the poly(methyl methacrylate) spun over the graphene film, and the monolayer graphene was transferred onto shallow depressions with 300 nm depth. The improved wet transfer onto perforated substrates with 2.7 mu m diameter holes yields 98% coverage of holes covered with continuous films, allowing the ready use of Raman spectroscopy and transmission electron microscopy to study the intrinsic properties of CVD-grown monolayer graphene. Additionally, monolayer graphene transferred onto flat substrates has fewer cracks and tears, as well as lower sheet resistance than previous transfer techniques. Monolayer graphene films transferred onto glass had a sheet resistance of similar to 980 Omega/sq and a transmittance of 97.6%. These transfer techniques open up possibilities for the fabrication of various graphene devices with unique configurations and enhanced performance.