▎ 摘　　要

A high-mobility graphene field-effect transistor with embedded gate was fabricated on smooth spin-coated polyimide films. Electrostatic transport measurements reveal a maximum electron and hole mobility of 4930 cm(2)/V s and 1130 cm(2)/V s, respectively. Temperature dependent measurements indicate that carrier transport is not limited by intrinsic mechanisms but by charged impurities, surface roughness, and defects, suggesting that further increases in mobility are possible. The measured carrier mobilities are the highest reported for graphene transistors on polymeric substrates and hence enable high-speed devices for flexible electronics from graphene grown by size-scalable chemical vapor deposition. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702570]