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  • 文献标题:   Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode
  • 文献类型:   Article
  • 作　　者:   SEO TH, LEE KJ, OH TS, LEE YS, JEONG H, PARK AH, KIM H, CHOI YR, SUH EK, CUONG TV, PHAM VH, CHUNG JS, KIM EJ
  • 作者关键词:   electrical conductivity, electrode, electroluminescence, gallium compound, graphene, iiiv semiconductor, indium compound, light emitting diode, nanostructured material, thin film, transparency, wide band gap semiconductor
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Chonbuk Natl Univ
  • 被引频次:   41
  • DOI:   10.1063/1.3601462
  • 出版年:   2011

▎ 摘　　要

We report a device that combines indium tin oxide (ITO) nanodot nodes with two-dimensional chemically converted graphene (CCG) films to yield a GaN-based light emitting diode (LED) with interesting characteristics for transparent and current spreading electrodes for the potential use in the ultraviolet region. The current-voltage characteristics and electroluminescence output power performance showed that CCG network on ITO nanodot nodes operated as a transparent and current spreading electrode in LED devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601462]