• 文献标题:   Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate
  • 文献类型:   Article
  • 作  者:   SIEGEL DA, ZHOU SY, EL GABALY F, SCHMID AK, MCCARTY KF, LANZARA A
  • 作者关键词:   buffer layer, crystal symmetry, epitaxial layer, graphene, low energy electron diffraction, monolayer, silicon compound, thin film
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Univ Calif Berkeley
  • 被引频次:   13
  • DOI:   10.1103/PhysRevB.80.241407
  • 出版年:   2009

▎ 摘  要

The crystallographic symmetries and spatial distribution of stacking domains in graphene films on 6H-SiC(0001) have been studied by low-energy electron diffraction and dark-field imaging in a low-energy electron microscope. We find that the graphene diffraction spots from two and three atomic layers of graphene have three-fold symmetry consistent with AB (Bernal or rhombohedral) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent six-fold symmetry, although the three-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.