▎ 摘　　要

Poisonous gas leakage is a serious problem and it is seen that due to the gas leakage, hazardous accidents occur every day. Therefore, detection of poisonous gas is very important in industrial production as well as in our daily life. Graphene is an important candidate for the next generation room temperature gas detectors. In this work, great sensitivity enhancement in graphene gas detectors was achieved by using highly charged ions (HCIs) irradiation technology. The graphene gas detectors prepared from single layer graphene were irradiated by 4.25 MeV Xe-54(17+) to different ion fluences. In 1 ppm NO2 atmosphere, 27 times higher gas sensitivity was detected in irradiated detectors. Even in the low concentration (50 ppb), 12 times sensitivity improvement was achieved. Furthermore, we obtained optimal sensitivity enhancement of graphene gas detectors for the irradiation fluences ranging from 1 x 10(13) ions/cm(2) to 7 x 10(14) ions/cm(2). Raman spectroscopy was used to investigate the evolution of defects induced in graphene. The three stages evolution process of the intensity ratio of D peak to G peak (ID/ IG) with increasing fluence was analyzed by using phenomenological model for better understanding of the sensitivity variation with increasing ion fluence.