▎ 摘　　要

The edge states which are observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate voltage dependence of conductivity of graphene with such nanoholes are obtained. Position and height of the resonances are determined by the localization depth of the quasibound edge states, and width by their lifetime. The scattering amplitude near the resonant energies has a strong valley asymmetry. We evaluate the effect of moderate edge rippling, inhomogeneity of boundary parameter along the edge, and Coulomb effects ( charged nanohole) on the edge states and show that they do not affect the presence of the resonances but can substantially influence their position, height, and width. The local density of states near the nanohole also demonstrates a resonant dependence on gate voltage.