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  • 文献标题:   Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer
  • 文献类型:   Article
  • 作　　者:   KIM J, JEONG SM, JEONG J
  • 作者关键词:   indium compound, gallium compound, graphene device, thin film transistor, semiconductor diode, electrode, transparent thin film transistor, diode circuit, graphene active layer, amorphous indiumgalliumzincoxide active layer, serial connection, transparent graphene diode, aigzo active layer, graphene electrode, c, ingazno
  • 出版物名称:   ELECTRONICS LETTERS
  • ISSN:   0013-5194 EI 1350-911X
  • 通讯作者地址:   Chungbuk Natl Univ
  • 被引频次:   2
  • DOI:   10.1049/el.2015.3086
  • 出版年:   2015

▎ 摘　　要

A transparent thin-film transistor-diode (TFT-diode) circuit through the serial connection of a transparent TFT and a transparent graphene diode comprised of an amorphous indium-gallium-zinc-oxide (a-IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction due to the directional operation of the transparent graphene diode. The resulting transparent TFT-diode device can be applied to transparent a-IGZO and graphene integrated circuits.