• 文献标题:   A Computational Study on the Electronic Transport Properties of Ultranarrow Disordered Zigzag Graphene Nanoribbons
  • 文献类型:   Article
  • 作  者:   DJAVID N, KHALIJI K, TABATABAEI SM, POURFATH M
  • 作者关键词:   lineedge roughness ler, meanfield hubbard model, nonequilibrium green s function negf formalism, single atom vacancy, substrate charged impuritie, zigzag graphene nanoribbons zgnrs
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:   Univ Tehran
  • 被引频次:   16
  • DOI:   10.1109/TED.2013.2290773
  • 出版年:   2014

▎ 摘  要

In this paper, the effect of structural nonidealities on the electronic transport properties of ultranarrow zigzag graphene nanoribbons (ZGNRs) is systemically investigated for the first time, employing the nonorthogonal third nearest neighbor mean-field Hubbard model along with the nonequilibrium Green's function formalism. We have evaluated the influence of line-edge roughness, single atom vacancies, and substrate-induced potential fluctuations on the transport gap, ON- and OFF-state conductances, and the ON/OFF conductance ratio of 12-nm-length ultranarrow ZGNRs. The results reveal that while even moderate amounts of edge roughness lead to a nonuniform suppression of the transmission probability and increase the transport gap, the presence of single atom vacancies tends to decrease the induced transport gap. Furthermore, it is shown that the transport properties of ZGNRs are more robust against potential fluctuations compared with their armchair counterparts.