• 文献标题:   Electronic structure of boron and nitrogen doped isomeric graphene nanoflakes
  • 文献类型:   Article
  • 作  者:   DE LA GARZA CGV, OLMEDO EM, FOMINE S
  • 作者关键词:   haeckelite, ionization energy, doping with boron, doping with nitrogen, electron affinity
  • 出版物名称:   COMPUTATIONAL THEORETICAL CHEMISTRY
  • ISSN:   2210-271X EI 1872-7999
  • 通讯作者地址:   Univ Nacl Autonoma Mexico
  • 被引频次:   4
  • DOI:   10.1016/j.comptc.2019.01.022
  • 出版年:   2019

▎ 摘  要

Electronic properties of nitrogen and boron doped isomeric graphene nanoflakes have been explored using dispersion corrected B3LYP functional and CASSCF methods. The most thermodynamically stable isomers of nitrogen and boron doped systems contain phenalene and azulene motifs substituted in positions 7 and 9, respectively. Nitrogen doping promotes nanoflake planarity, increases singlet-triplet gap and a band gap, while boron doping promotes dome shaped nanoflake geometry, polyradicalic ground state, reduces singlet-triplet gap. Isomeric nanoflakes are less sensitive to doping compared to graphene nanoflakes. Nitrogen is a weak n type dopant for isomeric nanoflakes, while boron cannot be considered as a p type dopant. This effect is explained by non-uniform electron density distribution in pristine isomeric nanoflakes as compared to graphene nanoflakes.