▎ 摘　　要

Graphene conductive foams have shown very high potential as cooling material in electronic systems. Its exploitation with discrete GaN transistors is demonstrated in this paper. A proper experimental setup is developed to extract the high temperature thermal performance of this material at different test conditions. The results are very promising, showing a noticeable reduction of the device maximum temperature, especially at high dissipated power densities. Moreover, experimental results allowed the validation of a 3D finite element model of the assembled device, which can be used for thermal layout optimization. Finally, preliminary stress tests are in progress, to evaluate the stability of electrical and thermal performance of the proposed graphene based assembly. Good stability was obtained, both at low and high ambient temperatures.