• 文献标题:   Gate-controlled electron transport in coronenes as a bottom-up approach towards graphene transistors
  • 文献类型:   Article
  • 作  者:   DIEZPEREZ I, LI ZH, HIHATH J, LI JH, ZHANG CY, YANG XM, ZANG L, DAI YJ, FENG XL, MUELLEN K, TAO NJ
  • 作者关键词:  
  • 出版物名称:   NATURE COMMUNICATIONS
  • ISSN:   2041-1723
  • 通讯作者地址:   Univ Utah
  • 被引频次:   77
  • DOI:   10.1038/ncomms1029
  • 出版年:   2010

▎ 摘  要

Graphene is considered to be a large aromatic molecule, the limiting case of the family of polycyclic aromatic hydrocarbons. This fascinating two-dimensional material has many potential applications, including field effect transistors (FETs). However, the graphene sheets in these devices have irregular shapes and variable sizes, and contain various impurities and defects, which are undesirable for applications. Moreover, the bandgap of graphene is zero and, consequently, the on/off ratios of graphene FETs are small, making it difficult to build logic circuits. To overcome these difficulties, we report here a bottom-up attempt to fabricate nanoscale graphene FETs. We synthesize structurally well-defined coronene molecules (consisting of 13 benzene rings) terminated with linker groups, bridge each molecule to source and drain electrodes through the linkers, measure conductance and demonstrate the FET behaviour of the molecule.