▎ 摘　　要

The field emission (FE) properties of vertically aligned graphene sheets (VAGSs) grown on different SiC substrates are reported. The VAGSs grown on nonpolar SiC (10-10) substrate show an ordered alignment with the graphene basal plane-parallel to each other, and show better FE features, with a lower turn-on field and a larger field enhancement factor. The VAGSs grown on polar SiC (000-1) substrate reveal a random petaloid-shaped arrangement and stable current emission over 8 hours with a maximum emission current fluctuation of only 4%. The reasons behind the differing FE characteristics of the VAGSs on different SiC substrates are analyzed and discussed.