• 文献标题:   Enhancing beta-phase and crystallization speed of poly(vinylidene fluoride) thin film by doping with graphene oxide
  • 文献类型:   Article
  • 作  者:   XIE PY, WANG J, TANG R, WU ZM, JIANG YD
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS
  • ISSN:   0957-4522 EI 1573-482X
  • 通讯作者地址:   Univ Elect Sci Technol China
  • 被引频次:   3
  • DOI:   10.1007/s10854-015-3592-0
  • 出版年:   2015

▎ 摘  要

High beta-phase poly(vinylidene fluoride) (PVDF) thin films were spin-coated from a solution doped with small amounts of graphene oxide (GO). The effects of GO on the characteristics of PVDF were examined by Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction measurements, and differential scanning calorimetry. The main crystal structure of GO doped PVDF thin film was beta-phase and the grain size of thin film decreased from 15 mu m (pure PVDF) to 3 mu m (GO doing). The optimized annealing temperature of PVDF/GO thin film was identified to be 75 A degrees C. At room temperature, the permittivity of PVDF thin film increased from 5.3 to 6.2 at 1 kHz. Further, the isothermal crystallization kinetics of PVDF/GO thin films demonstrated that GO could serve as an effective nucleating agent to promote the crystallization of PVDF.