▎ 摘　　要

Direct growth of graphene on insulating substrate is highly desired for practical applications in two-dimensional electronics and optoelectronics. However, the controllable synthesis of large scale graphene films on dielectrics is still limited in thickness and crystallinity by the absence of catalyst. Here we develop a transfer-free method to synthesize continuous graphene films on various insulating substrates by using molten Ga-Pd alloy and silicon carbide (SiC) as catalyst and carbon source. The catalytic Ga-Pd alloy induces the decomposition of Si-C bonds and promotes the formation of C-C sp2 at relatively low temperature around 1000 degrees C. The suitable carbon solubility of Ga-Pd alloy could also promote the fabrication of few-layer graphene films on the interface between alloy and SiC substrate as well as the upper surface of alloy. Furthermore, this strategy could be extended to the interfacial growth of graphene on other dielectrics by simply placing the substrate face down to the surface of molten alloy. The progress of this work may help to understand the mechanism of molten Ga-Pd alloy catalyzed interfacial growth of transfer-free graphene and benefit the application of graphene-based electronics and photonics in the future.