• 文献标题:   Holey reduced graphene oxide-assisted oxide-derived Bi for efficient nitrogen electroreduction
  • 文献类型:   Article
  • 作  者:   HUANG P, CHENG Z, ZENG L, TAN LL, YU J, RUSHIKESH J, FAN LS, ZHU YJ
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS CHEMISTRY A
  • ISSN:   2050-7488 EI 2050-7496
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.1039/d2ta00673a EA MAR 2022
  • 出版年:   2022

▎ 摘  要

Bismuth (Bi) has triggered rising scientific inquiry in the field of the electrochemical N-2 reduction reaction (NRR) due to its weak hydrogen binding capability and superior hydrogenation ability of *NN to *NNH. However, the application extension of Bi has been restricted owing to its unfavorable adsorption and activation of N-2 and its poor electrical conductivity. Reconstructing Bi itself or combining it with other materials is a universal strategy to address these challenges. Here, by integrating these two strategies, we report a simple thermal method to directly synthesize oxide-derived Bi anchored in holey reduced graphene oxide (odBi-hRGO). Benefiting from the unique structure which exhibits elevated N-2 adsorption, enhanced exposure of Bi active sites, and favorable inhibition of the hydrogen evolution reaction, odBi-hRGO showed a stimulative average NH3 yield and faradaic efficiency of up to 8.89 mu g cm(-2) h(-1) at -0.6 V (versus the reversible hydrogen electrode) and 24.34% at -0.55 V in 0.05 M H2SO4 under ambient conditions. Density functional theory calculations further reveal that oxide-derived Bi with under-coordinated sites is more favorable for the NRR than ideal Bi while hRGO plays a critical role in suppressing the hydrogen evolution reaction.