• 文献标题:   The enhancement of Hall mobility and conductivity of CVD graphene through radical doping and vacuum annealing
  • 文献类型:   Article
  • 作  者:   PHAM VP, MISHRA A, YEOM GY
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:   2046-2069
  • 通讯作者地址:   Sungkyunkwan Univ SKKU
  • 被引频次:   9
  • DOI:   10.1039/c7ra01330b
  • 出版年:   2017

▎ 摘  要

We report an innovative method for chlorine doping of graphene utilizing an inductively coupled plasma system. TEM analysis reveals that the pre-doping (doping before wet transfer) and normal-doping (doping after wet transfer) were generally formed and trapped well between graphene layers; moreover, by thermal stability testing, the chlorine-trapped layer-by-layer graphene showed a very high thermal stability in vacuum at 230 degrees C for 100 hours. We also obtained the sheet resistance and optical transmittance of the Cl-trapped tri-layer graphene at 72 Omega sq(-1) and 95.64% at 550 nm wavelength, respectively. In addition, the high hole mobilities for the chlorine-trapped bi-and tri-layer graphene were observed up to 3352 and 3970 cm(2) V-1 s(-1), respectively.