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  • 文献标题:   Quantifying defects in N-layer graphene via a phenomenological model of Raman spectroscopy
  • 文献类型:   Article
  • 作　　者:   GIRO R, ARCHANJO BS, FERREIRA EHM, CAPAZ RB, JORIO A, ACHETE CA
  • 作者关键词:   graphene, ion bombardment, computational simulation, defect
  • 出版物名称:   NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION BBEAM INTERACTIONS WITH MATERIALS ATOMS
  • ISSN:   0168-583X EI 1872-9584
  • 通讯作者地址:   IBM Res
  • 被引频次:   13
  • DOI:   10.1016/j.nimb.2013.10.028
  • 出版年:   2014

▎ 摘　　要

We construct a model to obtain the density of point defects in N-layer graphene by combining Raman spectroscopy and the TRIM (Transport Range of Ions in Matter) simulation package. The model relates the intensity (or area) ratio of graphene's D and G bands to the defect density on each layer due to Ar+ bombardment. Our method is effective for ion fluences ranging from 10(11) to similar to 10(14) Ar+/cm(-2) and it should be in principle extendable to any kind of ion and energy. (C) 2013 Elsevier B.V. All rights reserved.