▎ 摘　　要

We have theoretically investigated the Goos-Hanchen (GH) shift of the TM-polarized beam reflected from a graphene-on-dielectric surface near the Brewster angle. It is shown that even a single-layer graphene allows for notable variation of the GH shift. The GH shift can be enlarged and switched from positive to negative or vice versa. Importantly, the GH shift depends on the Fermi energy, and thus, it can be electrically controlled through electrical or chemical modification of the charge carrier density of the graphene. Furthermore, the relationship between the GH shift and the electron-phonon relaxation time and the number of graphene layers is clarified.