▎ 摘　　要

Valley polarization is one basic concept in valleytronic device applications. However, the coexistence of this scenario in graphene under the joint modulation of a realistic magnetic field and a strain has not been reported. Therefore, in this paper, we use the transfer-matrix method to illustrate the effect of a strain on the valley-dependent transport properties of electrons in a graphene with a realistic magnetic field. We find that the valley polarization strongly depends on the strength and the width of the strained barrier rather than on its position. We also find that the 100% valley polarization can be continuously achieved in a broad Fermi energy region by controlling the strain. This point makes it easier to design the new kinds of the valleytronic devices based on graphene modulated by the realistic magnetic field and the strain.