▎ 摘　　要

We report an on-chip integrated metal graphene silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 mu m and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain similar to 2. This paves the way to graphene integrated silicon photonics.