• 文献标题:   Controllable n-Type Doping on CVD-Grown Single- and Double-Layer Graphene Mixture
  • 文献类型:   Article
  • 作  者:   XU W, WANG L, LIU Y, THOMAS S, SEO HK, KIM KI, KIM KS, LEE TW
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Ulsan Natl Inst Sci Technol UNIST
  • 被引频次:   28
  • DOI:   10.1002/adma.201405353
  • 出版年:   2015

▎ 摘  要

n-Type doping of mixed single- and double-layer graphene grown by chemical vapor deposition (CVD) using decamethylcobaltocene reveals a local-quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening is deduced by comparing the relationship between the two factors for single-or double-layer graphene. This work has extensive applicability and practical significance in doping CVD-grown graphene.