• 文献标题:   Photo-Induced Charge Transfer Enhancement for SERS in a SiO2-Ag-Reduced Graphene Oxide System
  • 文献类型:   Article
  • 作  者:   GUO S, JIN SL, PARK E, CHEN L, MAO Z, JUNG YM
  • 作者关键词:   sio2agrgo, defect concentration, charge transfer, resonance raman scattering, sers activity
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:  
  • 被引频次:   8
  • DOI:   10.1021/acsami.0c17056 EA JAN 2021
  • 出版年:   2021

▎ 摘  要

Understanding and controlling the disorder in materials, especially the disorder caused by structural composition and doping effects, are important keys to studying the optical characteristics of materials. In this study, a SiO2 -Ag-reduced graphene oxide (rGO) composite structure was prepared by a simple wet chemical method, in which Ag nanoparticles (NPs) and SiO2 were decorated onto the surface of rGO. The introduction of Si atoms can control not only the plasmon effect of Ag NPs but also, more importantly, the defect concentration of rGO. The formation of defects causes the rGO structure to enter a metastable state, which facilitates charge separation and transfer in the system. It is worth noting that changes in defect concentration can affect the energy band position of rGO; therefore, controlling the defect concentration can be used to achieve charge transfer resonance coupling. This study not only revealed the ultrahigh surface-enhanced Raman scattering activity of the substrate structure but also elucidated in detail the effect of the crystallinity of this rGO-based composite system on its optical properties.