• 文献标题:   Graphene and graphene oxide nanogap electrodes fabricated by atomic force microscopy nanolithography
  • 文献类型:   Article
  • 作  者:   HE YD, DONG HL, LI T, WANG CL, SHAO W, ZHANG YJ, JIANG L, HU WP
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   51
  • DOI:   10.1063/1.3493647
  • 出版年:   2010

▎ 摘  要

Nanogap electrodes have been studied intensively both as ideal research tools for molecular electronics and fundamental building blocks for nanodevices. Here, graphene and graphene oxide nanogap electrodes with gap width below 10 nm were fabricated by atomic force microscopy (AFM) nanolithography. It provides a simple and convenient way to fabricate nanogap electrodes and transfer the nanogap electrodes onto any required substrate. As a preliminary demonstration, organic field-effect transistors and organic photoswitchers based on the nanogap electrodes were fabricated, which all exhibited high performance, indicating the great prospect of the nanogap electrodes and the AFM nanolithography technique for molecular electronics. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3493647]