• 文献标题:   Controlling the Orientation, Edge Geometry, and Thickness of Chemical Vapor Deposition Graphene
  • 文献类型:   Article
  • 作  者:   MURDOCK AT, KOOS A, BEN BRITTON T, HOUBEN L, BATTEN T, ZHANG T, WILKINSON AJ, DUNINBORKOWSKI RE, LEKKA CE, GROBERT N
  • 作者关键词:   graphene, cvd, cu, orientation, crystallography, ebsd
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Univ Oxford
  • 被引频次:   115
  • DOI:   10.1021/nn3049297
  • 出版年:   2013

▎ 摘  要

We report that the shape, orientation, edge geometry, and thickness of chemical vapor deposition graphene domains can be controlled by the crystallographic orientations of Cu substrates. Under low-pressure conditions, single-layer graphene domains align with zigzag edges parallel to a single (101) direction on Cu(111) and Cu(101), while bilayer domains align to two directions on Cu(001). Under atmospheric pressure conditions, hexagonal domains also preferentially align. This discovery can be exploited to generate high-quality, tailored graphene with controlled domain thickness, orientations, edge geometries, and grain boundaries.