▎ 摘　　要

Graphene and its nanocomposites with different semiconductor materials have attracted significant research interest in the last decade due to their improved performance in various fields. In this report, SnO2 and a reduced graphene oxide (rGO)-SnO2 composite is synthesized via hydrothermal method. Structural, optical and electrical characterization of the material is performed. Incorporation of rGO increases the light absorption and reduces the band gap of SnO2. Schottky barrier formation at metal-semiconductor junction is important for various applications. Here, we describe the performance of SnO2 and rGO-SnO2 based Schottky diode. Important diode parameters like rectification ratio, ideality factor, barrier height and series resistances are calculated from forward Current density-voltage (J-V) characteristics. rGO-SnO2 shows much better performance compared to SnO2. Analysis of Photoresponse behavior reveals that rGO-SnO2 shows photosensitivity of about 9.95 which is higher than that of SnO2 (2.42). After incorporation of rGO, other diode parameters and transport properties were also improved. To gain better insight on charge transport properties, space charge limited current theory has been utilized. In rGO-SnO2, carrier mobility is increased by 62% compared to SnO2, implying that rGO-SnO2 has better charge transport due to enhanced electron hole separation which is attribute to the presence of graphene.