▎ 摘　　要

A diffusion-drift treatment of electron and hole transport in macroscopic graphene is presented. The various material response functions that enter the theory are outlined and, to the extent possible, specified and calibrated. For purposes of illustration, the theory is applied to a variety of situations involving field-effect devices that are of potential technological interest. Both single and multilayer graphene are discussed, as is the effect of the small bandgaps that have been reported for graphene on SiC.