• 文献标题:   Gate control of spin transport in multilayer graphene
  • 文献类型:   Article
  • 作  者:   GOTO H, KANDA A, SATO T, TANAKA S, OOTUKA Y, ODAKA S, MIYAZAKI H, TSUKAGOSHI K, AOYAGI Y
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Tsukuba
  • 被引频次:   59
  • DOI:   10.1063/1.2937836
  • 出版年:   2008

▎ 摘  要

We experimentally studied the gate voltage dependence of spin transport in multilayer graphene (MLG) using the nonlocal spin detection technique. We found that the spin signal is a monotonically decreasing linear function of the resistance of MLG, which is characteristic of the intermediate interfacial transparency between the MLG and the ferromagnetic electrodes (Co). The linear relation indicates a large spin relaxation length significantly exceeding 8 mu m. This shows the superiority of MLG for the utilization of the graphite-based spintronic devices. (c) 2008 American Institute of Physics.