▎ 摘　　要

Fluorinated graphene was irradiated by electron beam, and the changing of fluorinated graphene after electron beam irradiation was found by several detection techniques of Raman, electrical characterization and X-ray photoelectron spectroscopy (XPS). Raman spectra and electric characterization confirmed that the crystal structure and electrical performance of graphene was recovered partially after electron beam irradiation. XPS results indicated that the concentration of fluorine quickly dropped from 35% to 15% just after 30 min irradiation, and then dropped, slowly to 10% with the irradiation time to 150 min. The results indicate that stimulate fluorine desorption from fluorinated graphene used electron beam completely is difficult, which means a big challenge for ESD to fabricate all graphene electronics.