▎ 摘　　要

One of the remaining problems for the application of graphene in solid-state devices is the production of large-area graphene films with low defect density and high uniformity including crystalline structures. In addition, revealing the graphene growth at the atomic scale is important for achieving high-quality graphene. Here, we used scanning tunneling microscopy to study the growth of large-area monolayer graphene grown by chemical vapor deposition of methane on a Cu(110) sample in an ultrahigh vacuum chamber. We show atomic scale characterization of two distinct graphene orientations and quasi-linear Moire patterns because of cooperative effects between graphene and the underlying atomic lattice of Cu(110).