• 文献标题:   Ab Initio Study of Deformation Influence on the Electronic Properties of Graphene Structures Containing One-Dimensional Topological Defects
  • 文献类型:   Article
  • 作  者:   VALISHINA AA, LYSOGORSKIY YV, NEDOPEKIN OV, TAYURSKII DA
  • 作者关键词:   ab initio, graphene, defect, band structure, flat band
  • 出版物名称:   JOURNAL OF LOW TEMPERATURE PHYSICS
  • ISSN:   0022-2291 EI 1573-7357
  • 通讯作者地址:   Kazan Fed Univ
  • 被引频次:   0
  • DOI:   10.1007/s10909-016-1664-z
  • 出版年:   2016

▎ 摘  要

The band structures of single and bilayer graphene with one-dimensional topological defects were calculated along the defect line, and appearance of the flat band near the Fermi level was observed. In addition, the influence of deformation (compression/expansion) on the flat band was studied. It was shown that compression across the grain boundary leads to disappearance of the flat band near the Fermi level, while the stretching along this direction does not significantly change the band structure. However, neither compression nor stretching along the grain boundary destroys the flat band.