• 文献标题:   Vacancy-Induced Low-Energy States in Undoped Graphene
  • 文献类型:   Article
  • 作  者:   SANYAL S, DAMLE K, MOTRUNICH OI
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Tata Inst Fundamental Res
  • 被引频次:   2
  • DOI:   10.1103/PhysRevLett.117.116806
  • 出版年:   2016

▎ 摘  要

We demonstrate that a nonzero concentration n(v) of static, randomly placed vacancies in graphene leads to a density w of zero-energy quasiparticle states at the band center epsilon = 0 within a tight-binding description with nearest-neighbor hopping t on the honeycomb lattice. We show that w remains generically nonzero in the compensated case (exactly equal number of vacancies on the two sublattices) even in the presence of hopping disorder and depends sensitively on n(v) and correlations between vacancy positions. For low, but not-too-low, vertical bar epsilon vertical bar/t in this compensated case, we show that the density of states rho(epsilon) exhibits a strong divergence of the form rho(Dysond) (epsilon) similar to vertical bar epsilon vertical bar(-1)/[log(t/vertical bar epsilon vertical bar)]((y+1)), which crosses over to the universal low-energy asymptotic form (modified Gade-Wegner scaling) expected on symmetry grounds rho(GW)(epsilon) similar to vertical bar epsilon vertical bar(-1)e(-b[log(t/vertical bar epsilon vertical bar)]2/3) below a crossover scale epsilon(c) << t. epsilon(c) is found to decrease rapidly with decreasing n(v), while y decreases much more slowly.