▎ 摘　　要

2D carbon materials are examined extensively by virtue of having functional-groups richness and adaptable interlayer spacing with exquisite electrochemical characteristics and flexibility. The phenomenal character of these materials enables them to be resilient in building memristive flexible electronics. The present work reports on a facile, inexpensive fabrication scheme of free-standing memory devices based on graphene and MXene, exhibiting complementary and capacitive resistive switching (RS) mechanisms for a retention time of 10(4) s with higher durability for >2400 cycles. The complementary RS in the single trilayer reduced graphene oxide/graphene oxide/reduced graphene oxide (rGO/GO/rGO) carbon cell helps in reducing fabrication complexity with its direct integration in crossbar arrays. While the observed capacitive switching enables MXene paper/graphene oxide paper/MXene paper (M/GO/M) memory device ensemble to retain combine capacitive as well as switching properties for designing self-generating memory frameworks, sustaining a continuous current even when the external applied bias is removed. The present work will pave pathways for carbon memristors as considerably competent candidates toward designing high performance flexible non-volatile memory architectures.