• 文献标题:   Valley filter in strain engineered graphene
  • 文献类型:   Article
  • 作  者:   FUJITA T, JALIL MBA, TAN SG
  • 作者关键词:   brillouin zone, fermi level, ferromagnetism, graphene, internal stresse, monolayer, nanoelectronic, nanomechanic
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Natl Univ Singapore
  • 被引频次:   121
  • DOI:   10.1063/1.3473725
  • 出版年:   2010

▎ 摘  要

We propose a simple, yet highly efficient and robust device for producing valley polarized current in graphene. The device comprises of two distinct components; a region of uniform uniaxial strain, adjacent to an out-of-plane magnetic barrier configuration formed by patterned ferromagnetic stripes. We show that when the amount of strain, magnetic field strength, and Fermi level are properly tuned, the output current can be made to consist of only a single valley contribution. Perfect valley filtering is achievable within experimentally accessible parameters. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3473725]