▎ 摘　　要

Graphene based material as a two-dimensional crystal structure with honeycomb configuration has been considered as a promising candidate for nanoelectronic devices. In this work bilayer graphene nanoribbon (BLG), which consists of two monolayer graphene structures as a one-dimensional system with unique band structure and remarkable properties, is used in the field effect transistors. The band structure of bilayer graphene has been modeled on the inversion symmetric AB-stacked BLG with a zero-band gap through A(1) and B-2 sites. The tunable energy gap of BLG can be employed in FET channel region with bottom-gated or top-gated configuration, leading to the controllable band gap. In this paper, current-voltage characteristic of bilayer graphene field effect transistor (BLG FET) is investigated. In addition, comparison study by extracted experimental data is reported, which indicates good agreement between proposed model and experimental data.