• 文献标题:   Poly-Trimethoxyphenylsilane as Carrier Film for Residual-Free CVD Graphene Transfer
  • 文献类型:   Article
  • 作  者:   KIM BJ, SHRIVASTAVA NK, NASIR T, CHOI KS, LEE J, KIM HC, KIM KW, DEVIKA M, LEE SH, JEONG BJ, YU HK, CHOI JY
  • 作者关键词:   chemical vapor deposition, graphene transfer, polytrimethoxyphenylsilane, polymer, thin film
  • 出版物名称:   PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS
  • ISSN:   1862-6254 EI 1862-6270
  • 通讯作者地址:   Sungkyunkwan Univ
  • 被引频次:   3
  • DOI:   10.1002/pssr.201700240
  • 出版年:   2017

▎ 摘  要

We synthesized poly-trimethoxyphenylsilane (PTMS) and applied it as the carrier film to CVD graphene transfer process for the first time. Since the PTMS particles are not fully crosslinked due to the presence of bulky groups, they do not have crystallinity in the long-range order on the graphene surface and are easily removed by solvent such as toluene. Raman, AFM, and X-ray photoemission (especially, Si 2p signal) analysis confirmed that the surface of the transferred graphene was clean without PTMS impurities.