▎ 摘　　要

Well defined patterns of SU-8 photoresist were fabricated using typical photolithographic process on high conductive silicon substrate. Electrophoretic deposition of reduced graphene oxide nanosheets (RGOS) on patterned SU-8 photoresist was conducted at room-temperature. The thin SU-8 photoresist could prevent the transverse deposition of RGOS over the photoresist areas to some extent. A little amount of RGOS at SU-8 photoresist areas were removed by rinsing treatment due to the hydrophobic nature of SU-8 and result in the formation of patterned RGOS films. The field-emission properties of patterned RGOS films show low turn-on electrical field and high current density. The low-cost and scale-up fabrication method can be easily utilized for assembly and integration of RGOS into patterned RGOS film for the field emission display applications at room-temperature. (C) 2013 Published by Elsevier B.V.