• 文献标题:   Stack of Graphene/Copper Foils/Graphene by Low-Pressure Chemical Vapor Deposition as a Thermal Interface Material
  • 文献类型:   Article
  • 作  者:   PHAM TT, HUYNH TH, DO QH, SPORKEN R
  • 作者关键词:   lpcvd graphene, copper foil, graphene on copper, interfacial thermal resistance, monolayer graphene, multilayer graphene
  • 出版物名称:   JOURNAL OF ELECTRONIC MATERIALS
  • ISSN:   0361-5235 EI 1543-186X
  • 通讯作者地址:   HCMC Univ Technol Educ
  • 被引频次:   0
  • DOI:   10.1007/s11664-018-6689-4
  • 出版年:   2018

▎ 摘  要

Although there are several kinds of thermal interfacial materials used in the electronic semiconductor industry, such as thermal grease, thermal glue, thermal gap filler, thermal pad and thermal adhesive, the problem of heat dissipation still remains a challenge. In this context, chemical vapor deposition of graphene on copper foils in vacuum has recently become considered as a wonderful hybrid material (graphene/copper/graphene) for more demanding thermal management applications, thanks to the unique properties of graphene in comparison with other materials. We found that the thermal properties of copper films change as graphene is deposited on top of the copper surface. Especially, a single atomic plane of graphene can significantly increase the film's thermal conductivity. Our graphene on copper foil was analyzed and measured by optical microscopy, Raman spectroscopy, scanning electron microscopy and heat transfer technique. This stack of graphene/copper/graphene materials may play a very important role as a potential material with superior thermal conductivity to replace traditional copper shim thermal pads in current electronic devices.