• 文献标题:   Broken Symmetry Quantum Hall States in Dual-Gated ABA Trilayer Graphene
  • 文献类型:   Article
  • 作  者:   LEE Y, VELASCO J, TRAN D, ZHANG F, BAO W, JING L, MYHRO K, SMIRNOV D, LAU CN
  • 作者关键词:   trilayer graphene, quantum hall effect, broken symmetrie, landau level crossing
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ Calif Riverside
  • 被引频次:   22
  • DOI:   10.1021/nl4000757
  • 出版年:   2013

▎ 摘  要

ABA-stacked trilayer graphene is a unique 2D electron system with mirror reflection symmetry and unconventional quantum Hall effect. We present low-temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors nu = -8, -2, 2, 6, and 10, which is in agreement with the full-parameter tight binding calculations. In high magnetic fields, odd-integer plateaus are also resolved, indicating almost complete lifting of the 12-fold degeneracy of the lowest Landau level (LL). Under an out-of-plane electric field E-perpendicular to, we observe degeneracy breaking and transitions between QH plateaus. Interestingly, depending on its direction, E-perpendicular to selectively breaks the LL degeneracies in the electron-doped or hole-doped regimes. Our results underscore the rich interaction-induced phenomena in trilayer graphene.