▎ 摘　　要

We report resistive switching in Pr0.7Ca0.3MnO3 (PCMO) devices using multilayer graphene (MLG) for nonvolatile memory applications. When MLG was used as a conducting electrode, PCMO device exhibited resistive switching with an on/off ratio of over two orders of magnitude and stable retention characteristics for over 10(4) s at 85 degrees C. Raman spectroscopy in both resistance states revealed increases in D and D ' peaks associated with defects and large shift in G peak position for high-resistance state. This was attributed to formation and dissolution of oxygenated graphene at the MLG/PCMO interface, resulting in resistive switching. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544051]