• 文献标题:   Performance enhancement of armchair graphene nanoribbon resonant tunneling diode using V-shaped potential well
  • 文献类型:   Article
  • 作  者:   MISHRA M, DAS NR, SAHOO N, SAHU T
  • 作者关键词:   armchair graphene nano ribbon, resonant tunneling diode, 2d negative differential resistance device
  • 出版物名称:   PHYSICA SCRIPTA
  • ISSN:   0031-8949 EI 1402-4896
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1088/1402-4896/ac42ed
  • 出版年:   2021

▎ 摘  要

We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (RTD) using square and V-shaped potential well profiles. We use non-equilibrium Green's function formalism to analyze the transmission and I-V characteristics. Results show that an enhancement in the peak current (I (p) ) can be obtained by reducing the well width (W (w) ) or barrier width (W (b) ). As W (w) decreases, I (p) shifts to a higher peak voltage (V (p) ), while there is almost no change in V (p) with decreasing W (b) . It is gratifying to note that there is an enhancement in I (p) by about 1.6 times for a V-shaped well over a square well. Furthermore, in the case of a V-shaped well, the negative differential resistance occurs in a shorter voltage range, which may beneficial for ultra-fast switching and high-frequency signal generation. Our work anticipates the suitability of graphene having better design flexibility, to develop ideally 2D RTDs for use in ultra-dense nano-electronic circuits and systems.