• 文献标题:   DFT/TDDFT Investigation of Electronic, Magnetic, and Optical Properties of Graphene Containing Different Values of Se Impurity
  • 文献类型:   Article
  • 作  者:   ARDAKANI YS, MORADI M
  • 作者关键词:   graphene, se impurity, density functional theory dft, semiconductor, timedependent density functional theory tddft
  • 出版物名称:   PHYSICS OF THE SOLID STATE
  • ISSN:   1063-7834 EI 1090-6460
  • 通讯作者地址:   Shiraz Univ
  • 被引频次:   0
  • DOI:   10.1134/S1063783420070021
  • 出版年:   2020

▎ 摘  要

The electronic, magnetic, and optical properties of graphene (gr) containing selenium impurities of 2, 3, 5.5, and 12.5% were calculated by DFT. By increasing the percentage of Se impurity, the energy gap decreases from about 0.3 eV for the gr+Se(2%), to about 0.1 eV for gr+Se(3%) monolayer. Continuing this trend leads to metallic property for gr+Se(5.5%) and gr+Se(12.5%) cases. By decreasing the percentage of Se impurity as a non-thermal control parameter, the magnetization started from zero and gradually increased so that the phase transition occurred. By calculating optical properties, using TDDFT, we found that in the absorption spectrums, a visible peak appeared for the cases of Se(3%) and Se(5.5%), and in the gr+Se(12.5%) layer, there exist an infrared shoulder. Also, except for gr+Se(3%), other cases have one peak in the UVA range. Finally, in the gr+Se(2%) case, for all optical variables, the peaks are sharper and stronger, therefore this case could behave as a quantum dot.