▎ 摘　　要

The effects of Au grains on graphene conduction and doping are investigated. To obtain a clean Au-graphene contact, Au grains are deposited over graphene before any chemical processing. The bulk and the effective contact resistance versus gate voltage demonstrate that Au grains cause p-doping in graphene. The Fermi level shift is in disagreement with published first-principles calculations, with larger than predicted separation between the graphene and the topmost Au layer. The differential resistance versus bias voltage display anomalies at zero bias and at higher voltages, the latter likely caused by inelastic tunneling across the Au-graphene interface.