▎ 摘　　要

In this work, a synthesis method for the growth of low-defect large-area graphene using carbon ion beam implantation into metallic Cu foils is presented. The Cu foils (1 cm(2) in size) were pre-annealed in a vacuum at 950 degrees C for 2 h, implanted with 35 keV carbon ions at room temperature, and subsequently annealed at 850 degrees C for 2 h to form graphene layers with the layer number controlled by the implantation fluence. The graphene was then transferred to SiO2/Si substrates by a PMMA-free wet chemical etching process. The obtained regions of monolayer graphene are of similar to 900 mu m size. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy performed at room temperature demonstrated a good quality and homogeneity of the graphene layers, especially for monolayer graphene. Published by AIP Publishing.