• 文献标题:   Ag NPs and MoS2 QDs double modified graphene/GaAs near-infrared photodetector
  • 文献类型:   Article
  • 作  者:   QU JQ, CHEN J
  • 作者关键词:   mos2 qd, ag np, gaa, nir photodetector
  • 出版物名称:   SEMICONDUCTOR SCIENCE TECHNOLOGY
  • ISSN:   0268-1242 EI 1361-6641
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1088/1361-6641/acc3bc
  • 出版年:   2023

▎ 摘  要

The light absorption enhancement ability of quantum dots (QDs) and the localized surface plasmon resonance (LSPR) effect of metal nanoparticles (NPs) can effectively improve the performance of photodetectors. In this paper, an Ag NPs and MoS2 QDs double modified graphene/GaAs near-infrared photodetector is investigated. The performance of the detector is improved by adopting the LSPR effect of Ag NPs and the dielectric confinement effect of MoS2 QDs. After subsequent testing and analysis, the photodetector responsivity is 21.1 mA W-1 and the detectivity is 8.4 x 10(12) cm Hz(1/2) W-1 at 808 nm wavelength; the responsivity and detectivity at 1064 nm wavelength can be up to 18.4 mA W-1 and 3.39 x 10(12) cm Hz(1/2) W-1, respectively. At the same time, under a 4 kHz pulsed illumination, the rise time and fall time are 15.87 mu s and 89.95 mu s respectively. Compared with previous devices, the new device has lower dark current and higher detectivity while having good responsivity and response time.