▎ 摘　　要

Gallium-nitride (GaN)-based hexagonal pyramids array vertical light emitting diodes (HPA VLEDs) have been assembled through compatible and rationally designed semiconductor fabrication processes. Compared with regular VLEDs (R-VLEDs), the HPA VLEDs have intrinsic bendability and showed a similar to 56% improvement in internal quantum efficiency (IQE) and a similar to 52% improvement in light extraction efficiency (LEE). Time-dependent photoluminescence (TDPL) tests and ray tracing simulations confirmed their improved IQE and LEE, respectively. Furthermore, HPA VLEDs with multilayer graphene (MLG) as the electrical interconnects were able to be locally bent and exhibited a stable optical output after many cycles of bending. To obtain uniform microscale HPA, a "dislocation engineering" approach was conceptually demonstrated. The proposed scheme was established for simple materials and low cost engineering; it will guide the fabrication of flexible optoelectronics, especially flexible inorganic GaN-based LEDs.