▎ 摘　　要

Gas sorption conditions on the graphene surface, as well as their influence on graphene properties, play a significant role when applications are considered. The influence of temperature and pressure on electric properties of graphene were investigated and discussed within this work, which was conducted in order to determine the border values for the sorption and desorption process of hydrogen on the graphene surface. The temperature was changed within the range of 243-373 K. Two types of graphene were used for comparison: one of graphene synthesised by our own method using chemical vapour deposition (CVD) and one of high strength metallurgical graphene (HSMG) in both conducting (cHSMG) and semiconducting (scHSMG) varieties. The characteristics were determined under hydrogen atmosphere in a fitted apparatus under pressure. The overall target material relies on the hydrogen storage of a designed graphene-based composite [1,2].