▎ 摘 要
Graphene has great application potential in radio frequency (RF) electronics such as low-noise amplifier (LNA) due to its amazing electrical properties. In this work, a graphene-transfer after process was developed to fabricate two-stage graphene LNA monolithic microwave integrated circuits (MMICs) on sapphire substrate to reduce possible damage to the graphene material in the device fabrication process. Using microstrip lines, inductances, and capacitances as input-output, and interstage impedance match networks, the two-stage Ku-band graphene LNA MMIC was obtained with a 10.2 dB maximum gain at 12.7 GHz, and 4.2 dB minimum noise figure at 12.5 GHz.