▎ 摘　　要

Combining with layered thin crystalline films, graphene has expanded its application scope beyond the regime where a gapless semimetal cannot serve. Here, we report the modulation of tunneling characteristics in graphene/hexagonal boron nitride (hBN) vertical heterostructure at different interlayer hBN thickness. These results signify an upshift in threshold voltages with hBN layer thickness. Furthermore, the gate-dependent tunneling characteristics of the device has been demonstrated. The back-gate voltages are used to adjust the fermi level of bottom graphene layer, which in turns tune the threshold voltages and tunneling current through ultrathin hBN layer. Our findings offer an effective tool to modulate the tunneling characteristics of vertical transistors for their potential applications in high frequency logic and tunnel devices.