▎ 摘 要
Graphene on copper foil produced through chemical vapor deposition has been transferred to different substrates and the Raman signatures from graphene on semi-insulating GaAs, n-GaAs, SiO2 (300 nm)/ Si, boron-doped Si, phosphorus-doped Si have been studied. It spectra from graphene. The obtained results are important for nanometrology of graphene and graphene based devices.